"A High Power-Added-Efficiency 2.5-GHz Class-F Power Amplifier Using 0.5 μm GaN on SiC HEMT Technology"
written by Chia-Han Lin, Hsien-Chin Chiu, Min-Li Chou, Hsiang-Chun Wang, Ming-Feng Huang,
published by Journal of Computer and Communications, Vol.4 No.3, 2016
has been cited by the following article(s):