Polarization and Breakdown Analysis of AlGaN Channel HEMTs with AlN Buffer

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ISSN Print: 2160-6919
ISSN Online: 2160-6927
www.scirp.org/journal/wjcmp
E-mail: wjcmp@scirp.org

"Polarization and Breakdown Analysis of AlGaN Channel HEMTs with AlN Buffer"
written by Godwin Raj, Mohan Kumar, Chandan Kumar Sarkar,
published by World Journal of Condensed Matter Physics, Vol.5 No.3, 2015

has been cited by the following article(s):

[1]	A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage
	2019

[2]	SIMULATION, ANALYSIS AND OPTIMIZATION OF VARIED DIELECTRICS AS SURFACE PASSIVATION ON AlGaN/GAN\HEMT
	2017

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