On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors). 3. The Minimum of Temperature Dependence of Resistivity

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ISSN Print: 2160-6919
ISSN Online: 2160-6927
www.scirp.org/journal/wjcmp
E-mail: wjcmp@scirp.org

"On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors). 3. The Minimum of Temperature Dependence of Resistivity"
written by Gulmurza Abdurakhmanov,
published by World Journal of Condensed Matter Physics, Vol.4 No.3, 2014

has been cited by the following article(s):

[1]	Chemical processes accompanying the formation of modified ruthenium resistors and their functional properties
	2020

[2]	МЕТАЛЛ ОКСИДЛАРИ БИЛАН ЛЕГИРЛАНГАН ИШҚОРСИЗ ҚЎРҒОШИН-СИЛИКАТ ШИШАЛАР СТРУКТУРАСИ ВА ТРАНСПОРТ ХОССАЛАРИНИНГ ЎЗИГА ХОС ЖИҲАТЛАРИ
	2014

[3]	Докторлик диссертацияси автореферати мундарижаси Оглавление автореферата докторской диссертации Content of the abstract of doctoral …
	2014

[4]	Peculiarities of the structure and transport properties of alkaline-free lead-silicate glasses doped by metal oxides
	2014

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[1]	Pseudogap, Nanocrystals and Electrical Conductivity of Doped Silicate Glass Technical Physics, 2021 DOI:10.1134/S106378422102002X

[2]	Chemical processes accompanying the formation of modified ruthenium resistors and their functional properties Russian Chemical Bulletin, 2020 DOI:10.1007/s11172-020-2955-8