Atomistic Simulation of Undissociated 60&deg ; Basal Dislocation in Wurtzite GaN.

ISSN Print: 2164-5345
ISSN Online: 2164-5353
www.scirp.org/journal/mnsms
E-mail: mnsms@scirp.org

"Atomistic Simulation of Undissociated 60° ; Basal Dislocation in Wurtzite GaN."
written by I. Belabbas, J. Chen, Ph. Komninou, G. Nouet,
published by Modeling and Numerical Simulation of Material Science, Vol.3 No.4B, 2013

has been cited by the following article(s):

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[4]	High-quality, 2-inch-diameter m-plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds Japanese Journal of Applied Physics, 2016 DOI:10.7567/JJAP.55.05FC01