"Ytterbium Intercalation of Epitaxial Graphene Grown on Si-Face SiC"
written by Somsakul Watcharinyanon, Leif I. Johansson, Chao Xia, Jan Ingo Flege, Axel Meyer, Jens Falta, Chariya Virojanadara,
published by Graphene, Vol.2 No.2, 2013
has been cited by the following article(s):
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[9] Noble-metal intercalation process leading to a protected adatom in a graphene hollow site
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[10] Intercalation of graphene on iridium with samarium atoms
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[11] Room temperature deintercalation of alkali metal atoms from epitaxial graphene by formation of charge-transfer complexes
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[12] Some Like it Flat: Decoupled h-BN Monolayer Substrates for Aligned Graphene Growth
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[13] Modification of thermal and electronic properties of bilayer graphene by using slow Na+ ions
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[15] Интеркалирование графена на иридии атомами самария
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[16] Bifunctional effects of the ordered Si atoms intercalated between quasi-free-standing epitaxial graphene and SiC (0001): graphene doping and substrate band …
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[17] Bifunctional effects of the ordered Si atoms intercalated between quasi-free-standing epitaxial graphene and SiC (0001): graphene doping and substrate band …
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[18] Bifunctional effects of the ordered Si atoms intercalated between quasi-free-standing epitaxial graphene and SiC (0001): graphene doping and substrate band bending
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[19] Ytterbium-driven strong enhancement of electron-phonon coupling in graphene
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[20] Electronic and magnetic properties of the graphene/Eu/Ni (111) hybrid system
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[21] Ytterbium oxide formation at the graphene–SiC interface studied by photoemission
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