Journal of Modern Physics

Journal of Modern Physics

ISSN Print: 2153-1196
ISSN Online: 2153-120X
www.scirp.org/journal/jmp
E-mail: jmp@scirp.org
"Annealing Effects on Electrical Properties and Interfacial Reactions of Ni/Cu Schottky Rectifiers on n-Type InP"
written by Yerpedu Munikrishna Reddy, M. K. Nagaraj, S. Sankar Naik, V. Rajagopal Reddy,
published by Journal of Modern Physics, Vol.3 No.7, 2012
has been cited by the following article(s):
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[1] Enhanced optoelectronics performances of multilayer Sb0. 1Mo0. 9Se2/SnSe2 heterostructure
Journal of Materials …, 2021
[2] The Structural, Optical, and Electrical Characterization of Ti/n-InP Schottky Diodes with Graphene Oxide Interlayer Deposited by Spray Pyrolysis Method
2020
[3] The Structural, Optical, and Electrical Characterization of Ti/n‐InP Schottky Diodes with Graphene Oxide Interlayer Deposited by Spray Pyrolysis Method
2020
[4] The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4 H-SiC
2018
[5] Titanium Dioxide-Based Memristive Thin Film: A Correlation Study Between the Experimental Work and Simulation Program With Integrated Circuit Emphasis …
2018
[6] On differential depletion length of Schottky diodes with copper-nickel alloy metal of front contact
2018
[7] On differential depletion length (ddl) of Schottky diode with copper-nickel alloy metal of front contact 2
Turkish Journal of Physics, 2018
[8] The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4H-SiC
Applied Physics A, 2018
[9] Thermal stability of a Schottky diode fabricated with transfer-free deposition of multilayer graphene on n-GaN by solid-phase reactions
Japanese Journal of Applied Physics, 2017
[10] Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO 3/WO x/W Structure
2016
[11] Electrical and photoelectrical characteristics of Au/GaN/GaAs Schottky diode
Optik, 2016
[12] Temperature-dependent non-linear resistive switching characteristics and mechanism using a new W/WO3/WOx/W structure
Nanoscale Research Letters, 2016
[13] Analysis of Electrical Properties and Carrier Transport Mechanisms of Ru/Ti/n-InP Schottky Diodes at Room Temperature
Analysis, 2015
[14] Ru/Ti Schottky Contacts on N-type In-P (100): Temperature Dependence of Current-Voltage (IV) Characteristics
Procedia Materials Science, 2015
[15] Effect of annealing temperature on the electrical, structural and surface morphological properties of Ru/Ti Schottky contacts on n-type InP
Superlattices and Microstructures, 2015
[16] Thermo photo-electrochemical effect in n-InP/aqueous solution of orange dye/C cell
Electronic Materials Letters, 2015
[17] Influence of annealing temperature on the electrical, structural and surface morphology properties of Au/Cr Schottky contacts on n-type InP
2014
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