Author(s)

Naidan Miao¹, Peipei Liu¹, Jianhao Wen¹, Jinxi Wei¹, Baichuan Zhang¹, Shiqi Wang¹, Ruwen Zeng¹, Guanyu Wang^1*, Chunyu Zhou^2*

¹College of Electronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing, China.
²Key Lab. for Microstruc. Mater. Phys. of Hebei Province, Yanshan University, Qinhuangdao, China.

In order to improve the electrical and frequency characteristics of SiGe heterojunction bipolar transistors (HBTs), a novel structure of SOI SiGe heterojunction bipolar transistor is designed in this work. Compared with traditional SOI SiGe HBT, the proposed device structure has smaller window widths of emitter and collector areas. Under the act of additional uniaxial stress induced by Si_0.85Ge_0.15, all the collector region, base region and emitter region are strained, which is beneficial to improve the performance of SiGe HBTs. Employing the SILVACO^Ⓡ TCAD tools, the numerical simulation results show that the maximum current gain β_max, the Earley voltage V_A are achieved for 1062 and 186 V, respectively, the product of β and V_A, i.e., β ×V_A, is 1.975 × 10⁵ V and, the peak cutoff frequency f_T is 419 GHz when the Ge component in the base has configured to be a trapezoidal distribution. The proposed SOI SiGe HBT architecture has a 52.9% improvement in cutoff frequency f_T compared to the conventional SOI SiGe HBTs.

Uniaxial Strain, SOI SiGe HBT, Electrical Performance, Frequency Performance

Miao, N. , Liu, P. , Wen, J. , Wei, J. , Zhang, B. , Wang, S. , Zeng, R. , Wang, G. and Zhou, C. (2020) Design and Simulation of Improved SOI SiGe Hetero-Junction Bipolar Transistor Architecture with Strain Engineering. Journal of Applied Mathematics and Physics, 8, 218-228. doi: 10.4236/jamp.2020.82017.