Author(s)

Seydina Diouf¹, Mor Ndiaye¹, Ndeye Thiam², Youssou Traore¹, Mamadou Lamine Ba², Ibrahima Diatta¹, Marcel Sitor Diouf¹, Oulimata Mballo¹, Amary Thiam¹, Ibrahima Ly², Grégoire Sissoko¹

¹Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal.
²Electromechanical Department, Polytechnic School of Thiès, Thiès, Senegal.

In this study, the effects of temperature and frequency on minority carrier diffusion coefficient in silicon solar cell under a magnetic field are presented. Using two methods (analytic and graphical), the optimum temperature corresponding to maximum diffusion coefficient is determined versus cyclotronic frequency and magnetic field.

Solar Cell, Diffusion Coefficient, Temperature, Magnetic Field, Frequency

Diouf, S. , Ndiaye, M. , Thiam, N. , Traore, Y. , Ba, M. , Diatta, I. , Diouf, M. , Mballo, O. , Thiam, A. , Ly, I. and Sissoko, G. (2019) Influence of Temperature and Frequency on Minority Carrier Diffusion Coefficient in a Silicon Solar Cell under Magnetic Field. Energy and Power Engineering, 11, 355-361. doi: 10.4236/epe.2019.1110023.