Author(s)

Masse Samba Diop¹, Hamet Yoro Ba², Ndeye Thiam², Ibrahima Diatta¹, Youssou Traore¹, Mamadou Lamine Ba², El Hadji Sow¹, Oulymata Mballo¹, Grégoire Sissoko¹

¹Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal.
²Laboratory of Sciences and Techniques of Water and Environment, Polytechnic School of Thiès, Thiès, Senegal.

New expressions of back surface recombination of excess minority carriers in the base of silicon solar are expressed dependent on both, the thickness and the diffusion coefficient which is in relationship with the doping rate. The optimum thickness thus obtained from the base of the solar cell allows the saving of the amount of material needed in its manufacture without reducing its efficiency.

Silicon Solar Cell, Surface Recombination Velocity, Diffusion Coefficient, Doping Rate, Base Thickness

Diop, M. , Ba, H. , Thiam, N. , Diatta, I. , Traore, Y. , Ba, M. , Sow, E. , Mballo, O. and Sissoko, G. (2019) Surface Recombination Concept as Applied to Determinate Silicon Solar Cell Base Optimum Thickness with Doping Level Effect. World Journal of Condensed Matter Physics, 9, 102-111. doi: 10.4236/wjcmp.2019.94008.