Author(s)

Youssou Traore¹, Ndeye Thiam², Moustapha Thiame³, Amary Thiam¹, Mamadou Lamine Ba², Marcel Sitor Diouf¹, Ibrahima Diatta¹, Oulymata Mballo¹, El Hadji Sow¹, Mamadou Wade², Grégoire Sissoko¹

¹Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal.
²Laboratory of Sciences and Techniques of Water and Environment, Polytechnic School of Thiès, Thiès, Senegal.
³University Assane SECK, Ziguinchor, Senegal.

The ac recombination velocity of the excess minority carriers, in the back surface of a silicon solar cell with a vertical junction connected in series, is developed through Einstein’s law giving the diffusion coefficient of minority carriers according to temperature, through mobility. The frequency spectrum of both, amplitude and phase, are produced for the diffusion coefficient and the recombination velocity in the rear face, in order to identify the parameters of equivalent electric models.

Vertical Multi-Junctions, Solar Cell, AC Back Surface Recombination Velocity, Temperature, Bode and Nyquist Diagrams

Traore, Y. , Thiam, N. , Thiame, M. , Thiam, A. , Ba, M. , Diouf, M. , Diatta, I. , Mballo, O. , Sow, E. , Wade, M. and Sissoko, G. (2019) AC Recombination Velocity in the Back Surface of a Lamella Silicon Solar Cell under Temperature. Journal of Modern Physics, 10, 1235-1246. doi: 10.4236/jmp.2019.1010082.