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AC Recombination Velocity in the Back Surface of a Lamella Silicon Solar Cell under Temperature

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DOI: 10.4236/jmp.2019.1010082    373 Downloads   552 Views

ABSTRACT

The ac recombination velocity of the excess minority carriers, in the back surface of a silicon solar cell with a vertical junction connected in series, is developed through Einstein’s law giving the diffusion coefficient of minority carriers according to temperature, through mobility. The frequency spectrum of both, amplitude and phase, are produced for the diffusion coefficient and the recombination velocity in the rear face, in order to identify the parameters of equivalent electric models.

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Traore, Y. , Thiam, N. , Thiame, M. , Thiam, A. , Ba, M. , Diouf, M. , Diatta, I. , Mballo, O. , Sow, E. , Wade, M. and Sissoko, G. (2019) AC Recombination Velocity in the Back Surface of a Lamella Silicon Solar Cell under Temperature. Journal of Modern Physics, 10, 1235-1246. doi: 10.4236/jmp.2019.1010082.

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