Author(s)

Hrant N. Yeritsyan^1*, Aram A. Sahakyan¹, Norair E. Grigoryan¹, Vachagan V. Harutyunyan¹, Bagrat A. Grigoryan², Gayane A. Amatuni², Arsham S. Yeremyan², Christopher J. Rhodes³

¹Department of Applied Physics, Yerevan Physics Institute, Yerevan, Armenia.
²CANDLE Synchrotron Research Institute, Yerevan, Armenia.
³Fresh-Lands Environmental Actions, Caversham, UK.

This paper reports results from an investigation of the interaction of displaced Si-self atoms (I) and their vacancies (V), with impurities in crystalline silicon (Si), as induced by micro-second pulse duration irradiation with electrons at different energies: 3.5, 14, 25 and 50 MeV and pico-second pulse duration with energy 3.5 MeV. V-V, I-impurity atom and V-impurity atom interactions are analyzed both experimentally and as modeled using computer simulations. A process of divacancy (V₂) accumulation in the dose-dependent linear region is investigated. The effect of impurities on recombination of correlated divacancies, and I-atoms that had become displaced from regular lattice points is estimated by computer modeling of an appropriate diffusion-controlled process. It is concluded that the experimental results can be interpreted quantitatively in terms of a strongly anisotropic quasi-one-dimensional diffusion of displaced I-atoms. In addition, a significant difference is found between the effects of pico-second duration electron beam irradiation, which causes the formation of A-centre (V + Oxygen) clusters, while when the beam is applied on a micro-second timescale, divacancies are created instead, although the electrons have the same energy in both cases.

Silicon Crystal, Electron Irradiation, Divacancy, Radiation Defects, Introduction Rate, Impurity Atom

Yeritsyan, H. , Sahakyan, A. , Grigoryan, N. , Harutyunyan, V. , Grigoryan, B. , Amatuni, G. , Yeremyan, A. and Rhodes, C. (2018) Quasi-Chemical Reactions in Irradiated Silicon Crystals with Regard to Ultrafast Irradiation. Journal of Modern Physics, 9, 1271-1280. doi: 10.4236/jmp.2018.96075.