Author(s)

Kun-Lin Lin^1*, Yi-Ling Jian¹, Che-Yu Lin², Chien-Cheng Lin², Yih-Rong Luo³, Chien-Chia Tseng³

¹National Nano Device Laboratories, National Applied Research Laboratories, Taipei City.
²Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu.
³AUO Crystal Corporation, Taichung City.

Bulk Czochralski silicon crystals were decorated with Cu and characterized by transmission electron microscopy (TEM) with energy-dispersive spectroscopy (EDS), atomic force microscopy (AFM), optical microscopy (OM), scanning electron microscopy (SEM), and photoluminescence spectroscopy (PL). The vacancy-type core, oxidation-induced stacking faults (OISF) ring, nearly defect-free ring, and self-interstitial-type rich outer ring were delineated in the Si crystal wafer. At the surface of the Si crystal, vertical-horizontal line (V-H line) defects and windmill defects (W-defects) were formed instead of OISF. The families of growth planes and directions were expressed as {011} and <110> for the V-H line and {010} and <010> for W-defects, respectively. In addition to V-H line defects and W-defects, pits or voids and Si oxide with dissolved Cu were found in the Si crystal wafer.

CZ Silicon, Cu Decoration, Microstructures, Defects, Transmission Electron Mi-croscopy

Lin, K. , Jian, Y. , Lin, C. , Lin, C. , Luo, Y. and Tseng, C. (2017) Identification of Grown-In Defects in CZ Silicon after Cu Decoration. Microscopy Research, 5, 11-19. doi: 10.4236/mr.2017.52002.