Author(s)

Masato Ohmukai¹, Takuya Nakagawa², Ayumu Matsumoto³

¹Department of Electrical and Computer Engineering, Akashi College of Technology, Akashi, Japan.
²Technical Education Support Center, Akashi College of Technology, Akashi, Japan.
³Collaborative Laboratories for Advanced Decommissioning Science, Japan Atomic Energy Agency, Ibaraki, Japan.

ZnO is now a fascinating semiconductor oxide material for light emission or transparent electronic conductors. We deposited ZnO films on porous silicon, which is known as a light emitting material based on silicon, by means of a direct current sputtering technique. The deposition was performed at room temperature, and the samples were annealed afterwards to improve the ZnO crystalline quality. The discussion to compare our results with that formed on Si wafer, reveals that the ZnO on porous silicon has the better crystalline quality in the scope of an X-ray diffraction measurement.

ZnO Film, DC Sputtering, Annealing, X-Ray Diffraction Analysis, Porous Silicon

Ohmukai, M. , Nakagawa, T. and Matsumoto, A. (2017) ZnO Films Deposited on Porous Silicon by DC Sputtering. Journal of Materials Science and Chemical Engineering, 5, 12-20. doi: 10.4236/msce.2017.56002.