Mg Tilted-Angle Ion Implantation for Threshold Voltage Control and Suppression of the Short Channel Effect in GaN MISFETs - Journal of Materials Science and Chemical Engineering

MSCE > Vol.5 No.1, January 2017

Mg Tilted-Angle Ion Implantation for Threshold Voltage Control and Suppression of the Short Channel Effect in GaN MISFETs ()

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DOI: 10.4236/msce.2017.51007 3,136 Downloads 4,078 Views

Author(s)

Hayao Kasai, Takuya Oikawa, Tomoyoshi Mishima, Tohru Nakamura

Affiliation(s)

Department of Electrical and Electronics Engineering, Hosei University, Koganei, Tokyo, Japan.

ABSTRACT

This paper demonstrates that threshold voltages of GaN MISFET are controlla-ble by varying the Mg ion doses for Mg ion implantation. Furthermore, it de-monstrates for the first time that the short channel effect can be suppressed using a halo structure that has a p-layer in channel regions adjacent to source/ drain regions using tilt ion implantation. A device with a Mg dose of 8 × 1013/cm2 achieved maximum drain current of 240 mA/mm and a transconductance of 40 mS/mm. These results indicate a definite potential for the use of our new process in GaN MISFETs for applications in power switching devices.

KEYWORDS

GaN, MISFET, Mg Ion Implantation, Threshold Voltage

Share and Cite:

Kasai, H. , Oikawa, T. , Mishima, T. and Nakamura, T. (2017) Mg Tilted-Angle Ion Implantation for Threshold Voltage Control and Suppression of the Short Channel Effect in GaN MISFETs. Journal of Materials Science and Chemical Engineering, 5, 48-53. doi: 10.4236/msce.2017.51007.

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