Ohmic Contact Formation for n+4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation - Journal of Materials Science and Chemical Engineering

MSCE > Vol.5 No.1, January 2017

Ohmic Contact Formation for n+4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation ()

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DOI: 10.4236/msce.2017.51005 3,286 Downloads 4,306 Views Citations

Author(s)

Tetsuji Arai¹, Kazuki Kamimura¹, Chiaya Yamamoto¹, Mai Shirakura¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Toshiyuki Takamatsu², Masaaki Ogino³, Masaaki Tachioka³, Haruo Nakazawa³

Affiliation(s)

¹Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan.
²SST Inc., Yachiyo, Japan.
³Fuji Electric Co., Ltd., Matsumoto, Japan.

ABSTRACT

We developed an apparatus for producing high-density hydrogen plasma. We confirmed that the temperatures of transition-metal films increased to above 800?C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of W/Ni films deposited on n+4H-SiC wafers and formed nickel silicide electrodes. To utilize this method, we can perform the nickel silicidation process without heating the other areas such as channel regions and improve the reliability.

KEYWORDS

Selective Heating, Nickel Silicide Electrode, Hydrogen Plasma, Ohmic Contact, SiC

Share and Cite:

Arai, T. , Kamimura, K. , Yamamoto, C. , Shirakura, M. , Arimoto, K. , Yamanaka, J. , Nakagawa, K. , Takamatsu, T. , Ogino, M. , Tachioka, M. and Nakazawa, H. (2017) Ohmic Contact Formation for n+4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation. Journal of Materials Science and Chemical Engineering, 5, 35-41. doi: 10.4236/msce.2017.51005.

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