Author(s)

Gokhan Sahin, Moustapha Dieng, Mohamed Abderrahim Ould El Moujtaba, Moussa Ibra Ngom, Amary Thiam, Grégoire Sissoko^*

Physics Department, Faculty of Sciences and Techniques, University of Cheikh Anta Diop, Dakar, Senegal.

The aim of this study is to show the influence of the wavelength on the electrical parameters of vertical parallel junction silicon solar cell by use of impedance spectroscopy technique. The Bode diagrams of the diffusion capacitance are shown for different wavelengths while the solar cell operates under both open circuit and short circuit conditions. The Nyquist diagram of the diffusion capacitance has shown the extension of the space charge region for various wavelengths.

Vertical Parallel Junction, Wavelength, Capacitance, Bode and Nyquist Diagrams

Sahin, G. , Dieng, M. , Moujtaba, M. , Ngom, M. , Thiam, A. and Sissoko, G. (2015) Capacitance of Vertical Parallel Junction Silicon Solar Cell under Monochromatic Modulated Illumination. Journal of Applied Mathematics and Physics, 3, 1536-1543. doi: 10.4236/jamp.2015.311178.