Ferroelectric SrBi
2Ta
2O
9-(Bi
4Ti
3)
1-xNb
xO
12 (x = 0.02) (SBT-BTN) multilayer thin films with various stacking periodicity have been synthesized on Ir/Ti/SiO
2/Si substrate by metal organic chemical vapor deposition technique (MOCVD). Tributylbismuth [Bi(C
4H
9)
3], Strontium-bis[Tantal(pentanethoxy)(2-methoxyethoxid)] [Sr[Ta(OEt)
5(OC
2H
4OMe)]
2], Titanium Bis(isopropoxy)bis(1-methoxy-2-methyl-2-propoxide) [Ti(OiPr)
2(mmp)
2] and Niob-ethoxide [Nb(OC
2H
5)
5] were selected as precursors. X-ray diffraction patterns show that the multilayer films annealed at 800
oC consist of fully formed perovskite phase with polycrystalline structure and plate-like grains with no crack. The remanent polarization (
) and coercive field (Ec) are 16.2 μC/cm
2 and 230 kV/cm, respectively, which is much higher, compared to pure SBT film (
= 6.4 μC/cm
2, Ec = 154 kV/cm). In the films prepared above 700
oC, postannealing increased the capacitor shorting rate; this was attributed to oxidizing of the top iridium layer. In this paper, the dependence of composition variation around stoichiometric on ferroelectric properties in SBT-BTN multilayer films is studied.