Author(s)

Néstor David Espinosa-Torres^1,2*, José Álvaro David Hernández de la Luz¹, José Francisco Javier Flores-Gracia¹, José Alberto Luna-López¹, Javier Martínez-Juárez¹, Gregorio Flores-Carrasco^1,3

¹IC-CIDS Benemérita Universidad Autónoma de Puebla, Puebla, México.
²Ex Graduate Research Trainee at Plasma Processing Laboratory, Chemical Engineering Department, McGill University, Montreal, Canada.
³Department of Materials Science and Engineering and Chemical Engineering, University Carlos III of Madrid and IAAB, Madrid, Spain.

The Global Reaction Model describes a set of chemical reactions that can potentially occur during the process of obtaining silicon rich oxide (SRO) films, regardless of the technique used to grow such films which are an outside stoichiometry material. Particularly, chemical reactions that occur during the process of growing of SRO films by LPCVD technique are highlighted in this model. We suggest and evaluate either some types of molecules or resulting nanostructures and we predict theoretically, by applying the density functional theory, the contribution that they may have to the phenomenon of luminescence which is measured in SRO films. Also, we have calculated the opto-electronic properties of SRO films. The suggested model provides enough information required to identify the molecular structures resulting from the presence of defects in SRO films and also those corresponding to charged structures. It is also possible to detect the molecular structures which are modified due to the effect of heat treatment, and identify the presence of different oxidation states inclusive the formation of siloxanes.

Global Reactions Model, Silicon Rich-Oxide, Defects, LPCVD, Luminescence

Espinosa-Torres, N. , Hernández de la Luz, J. , Flores-Gracia, J. , Luna-López, J. , Martínez-Juárez, J. and Flores-Carrasco, G. (2015) Forecast of the Luminescent Phenomena of Silicon Rich Oxide Films off Stoichiometry by Means of the Global Reaction Model. Journal of Modern Physics, 6, 1679-1694. doi: 10.4236/jmp.2015.611170.