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Design of a Low-Noise Front-End Readout Circuit for CdZnTe Detectors

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DOI: 10.4236/jsip.2013.42017    3,666 Downloads   5,558 Views Citations


In this paper, the design of a novel low-noise front-end readout circuit for Cadmium zinc telluride (CdZnTe) X-ray and γ-ray detectors is described. The front-end readout circuits include the charge sensitive amplifier (CSA) and the CR-RC shaper is implemented in TSMC 0.35 μm mixed-signal CMOS technology. The die size of the prototype chip is 4.9 mm × 2.2 mm. The simulation results show that, the noise performance is 46 electrons + 10 electrons/pF, and power consumption is 1.65 mW per channel.

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B. Gan, T. Wei, W. Gao, H. Zeng and Y. Hu, "Design of a Low-Noise Front-End Readout Circuit for CdZnTe Detectors," Journal of Signal and Information Processing, Vol. 4 No. 2, 2013, pp. 123-128. doi: 10.4236/jsip.2013.42017.

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