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The Efficiency of a p-n Solar Diode as a Function of the Recombination Velocity within the Depletion Layer

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DOI: 10.4236/opj.2012.24040    2,749 Downloads   4,617 Views Citations

ABSTRACT

The role of the carrier’s recombination velocity Si within the depletion Layer of p-n junction solar cell and the external bias voltage Va across the junction in determining the current density “J” through the cell is revealed. The unsteady carrier diffusion equation is solved under illumination conditions considering a source spectral function G(λ). The efficiency of the device as a function of Si , Va , G(λ) is obtained. Computations considering a silicon solar cell are given as an illustrative example.

Cite this paper

M. El-Adawi and N. Al-Shameri, "The Efficiency of a p-n Solar Diode as a Function of the Recombination Velocity within the Depletion Layer," Optics and Photonics Journal, Vol. 2 No. 4, 2012, pp. 326-331. doi: 10.4236/opj.2012.24040.

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