Author(s)

Tatsuya Yamaguchi, Ken-ichi Saitoh

Department of Mechanical Engineering, Faculty of Engineering Science, Kansai University, Suita, Japan.
System Design Major, Graduate School of Science and Engineering, Kansai University, Suita, Japan.

Stress and strain in the structure of self-assembled quantum dots constructed in the Ge/Si(001) system is calculated by using molecular dynamics simulation. Pyramidal hut cluster composed of Ge crystal with {105} facets surfaces observed in the early growth stage are computationally modeled. We calculate atomic stress and strain in relaxed pyramidal structure. Atomic stress for triplet of atoms is approximately defined as an average value of pairwise (virial) quantity inside triplet, which is the product of vectors between each two atoms. Atomic strain by means of atomic strain measure (ASM) which is formulated on the Green’s definition of continuum strain. We find the stress (strain) relaxation in pyramidal structure and stress (strain) concentration in the edge of pyramidal structure. We discuss size dependency of stress and strain distribution in pyramidal structure. The relationship between hydrostatic stress and atomic volumetric strain is basically linear for all models, but for the surface of pyramidal structure and Ge-Si interface. This means that there is a reasonable correlation between atomic stress proposed in the present study and atomic strain measure, ASM.

Molecular Dynamics; Self-Assembled Quantum Dot; Germanium; Silicon; Mechanical Property

T. Yamaguchi and K. Saitoh, "Molecular Dynamics Study on Mechanical Properties in the Structure of Self-Assembled Quantum Dot," World Journal of Nano Science and Engineering, Vol. 2 No. 4, 2012, pp. 189-195. doi: 10.4236/wjnse.2012.24025.