Dopant Implantation into the Silicon Substrate with Non-Planar Surface - Energy and Power Engineering

EPE > Vol.2 No.2, May 2010

Dopant Implantation into the Silicon Substrate with Non-Planar Surface ()

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DOI: 10.4236/epe.2010.22011 3,983 Downloads 6,733 Views Citations

Author(s)

Gennady A. Tarnavsky, Evgenii V. Vorozhtsov

Affiliation(s)

ABSTRACT

The influence of technological process parameters (aiming angle and implantation energy) on the distributions of dopant concentrations in a silicon substrate is investigated by computer modeling.

KEYWORDS

Computer Modeling, Silicon Doping, Implantation, Donor, Acceptor Dopants

Share and Cite:

G. Tarnavsky and E. Vorozhtsov, "Dopant Implantation into the Silicon Substrate with Non-Planar Surface," Energy and Power Engineering, Vol. 2 No. 2, 2010, pp. 73-77. doi: 10.4236/epe.2010.22011.

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