School of Microelectronics and Solid-State Electronics

University of Electronic Science and Technology of China

Email: ze.jia@ieee.org

Qualifications

2007 Ph.D., Institute of Microelectronics, Tsinghua University, China

2002 B.Sc., Department of Electronic Engineering, Tsinghua University, China

Publications (selected)

1. Yin C; Jia Z*; Ma WC; et al. Magnetoresistive Behavior and Magnetization Reversal of NiFe/Cu/CoFe/IrMn Spin Valve GMRs in Nanoscale, International Journal of Minerals, Metallurgy and Materials, 2013, in press
2. Yin C; Jia Z*; Ma WC; et al. Modeling and analysis of nano-sized GMRs based on Co, NiFe and Ni materials, Science China: Information Sciences, 2013, published online. (DOI: 10.1007/s11432-012-4759-4)
3. Jia Z*; Wang LK; Zhang NW; et al. Effects of anode materials on resistive characteristics of NiO thin films, Applied Physics Letters, 2013, 102: 042901.
4. Ma WC; Jia Z*; Yin C; et al. Analysis and Optimization of GMR Based Current Sensors with Identical Pinning Orientation, ECS Transactions, 2012(1), 44: 1419.
5. Xu JL; Jia Z*; Zhang NW; et al. Influence of La and Mn dopants on the current-voltage characteristics of BiFeO3/ZnOheterojunction, Journal of Applied Physics, 2012, 111: 074101.
6. Yin C; Jia Z*; Ma WC; et al. Simulations of Interaction among GMRs in a Nano-sized Biosensor Array, Tsinghua Science and Technology, 2011(2), 16: 151.
7. Zhang NW; Jia Z*; Zhang MM; et al. Comparisons and Analyses on Heterostructures Consisting of ZnO and Different Ferroelectric Films, Proceedings of MRS, 2011, 1368. (DOI: 10.1557/opl.2011.1088)
8. Jia Z*; Zhang MM; Ren TL. Modulation effect of lead zirconatetitanate for zinc oxide channel resistance in ferroelectric field effect transistor, Ferroelectrics, 2011(1), 421: 92.
9. Zhang MM; Jia Z*; Yin C; et al. Effects of Wet Etching on Properties of Lead Zirconium Titanate in Integration Process, Nanotechnology and Precision Engineering, 2011(4), 9: 357.
10. Zhang MM; Jia Z*; Wang LK; et al. Study of Iridium Bottom Electrode in Ferroelectric Random Access Memory Application, Ferroelectrics, 2010(1), 406: 97.
11. Jia Z*; Wang LK; Ren TL. Influences of Interface States on Resistive Switching Properties of TiOx with Different Electrodes, Chinese Physics Letters, 2010, 27:118503.
12. Wang LK; Jia Z*;Ren TL. Bipolar Switching Analysis and Negative Resistance Phenomenon in TiOx-based Devices, IEEE EDSSC, Hong Kong, 2010.
13. Zhang MM; Jia Z*;Ren TL. Effects of electrodes on the properties of sol–gel PZT based capacitors in FeRAM, Solid-State Electronics, 2009, 53: 473.
14. Jia Z*; Ren TL; Liu TZ; et al. Study on oxidization of Ru and its application as electrode of PZT capacitor for FeRAM, Materials Science and Engineering B, 2007, 138: 219.
15. Jia Z*; Ren TL; Zhang ZG; et al. Pt/Pb(Zr,Ti)O3/Pt capacitor with excellent fatigue properties by sol-gel process applied to FeRAM. Journal of Physics D, 2006, 39: 2587.
16. Jia Z*; Ren TL; Liu TZ; et al. Comparison of Properties of Pt/PZT/Pt and Ru/PZT/Pt Ferroelectric Capacitors, Chinese Physics Letters, 2006, 23: 1042.

17. Jia Z*; Ren TL; Zhang ZG; et al. Fabrication Process of Sol-Gel Spin Coating for SrBi2Ta2O9 Films Applied to FeRAM, Chinese Physics Letters, 2006, 23: 1943.

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