Dr. Govindhan Dhanaraj

Department of Materials Sciences and Engineering

Stony Brook University, USA

Email: govindhan.dhanaraj@stonybrook.edu

Qualifications

1992 Ph.D., Crystal Growth and Characterization, Indian Institute of Science, India

1984 M.Sc., Applied Sciences (Materials Science), Anna University, India

1981 B.Sc., Physics, Chemistry and Mathematics. University of Madras, India

Publications (selected)

1. An overview of crystal growth techniques and characterization, G Dhanaraj, K. Byrappa, V. Prasad and M. Dudley, in “Springer Handbook of Crystal Growth, Defects and Characterization”, Eds: G. Dhanaraj, K. Byrappa, V. Prasad and M. Dudley, Springer Publications (2010), chapter 1, pages 3-16.
2. Progress in crystal growth and defect characterization of silicon carbide for electronic applications, G. Dhanaraj and M. Dudley, in “Springer Handbook of Crystal Growth, Defects and Characterization”, Eds: G. Dhanaraj, K. Byrappa, V. Prasad and M. Dudley, Springer Publications (2010), chapter 23, pages 797-820.
3. X-ray topographic defect characterization of crystals, B. Raghomachar G. Dhanaraj and M. Dudley, in “Springer Handbook of Crystal Growth, Defects and Characterization”, Eds: G. Dhanaraj, K. Byrappa, V. Prasad and M. Dudley, Springer Publications (2010), chapter 42, Pages 1425-1451.
4. G. Dhanaraj, B. Raghothamachar, M. Dudley, X-ray characterisation of zinc oxide (ZnO) single crystal substrates, Materials Research Innovations, Volume 14, Number 1, February 2010 , pp. 34-37(4).
5. Y. Chen, G. Dhanaraj, M. Dudley, E.K. Sanchez, M.F.MacMillan, Sense determination of micropipes via grazing-incidence synchrotron white beam x-ray topography in 4H silicon carbide Applied Physics Letters 91 (2007) 071917.
6. R. Wang, R. Ma, G. Dhanaraj, Y. Chen and M. Dudley, “Computational Study of SiCHalid Chemical Vapor Deposition System”, Proceedings of ASME 2007 International Mechanical Engineering Congress and Exposition.
7. G. Dhanaraj, Y. Chen, H. Chen, D. Cai, H. Zhang and M. Dudley, Chemical Vapor Deposition of Silicon Carbide Epitaxial Films and Their Defect Characterization, Journal of Electronic Materials36 (2007) 332.
8. Y. Chen, G Dhanaraj, W. Vetter, R. Ma and M. Dudley, Multiplication of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide, Materials Science Forum 556 (2007) 231.
9. G. Dhanaraj, M. Dudley, D. Bliss, M. Callahan, M. Harris, Growth and process induced dislocations in hydrothermal zinc oxide crystals, Journal of Crystal Growth 297 (2006) 74.
10. Y. Chen, G Dhanaraj, H. Zhang and M. Dudley, Thermodynamic studies of carbon in liquid silicon, Journal of the American Ceramic Society 89 (2006) 2922.
11. G. Dhanaraj, Y. Chen1, H. Chen, W.M Vetter, H. Zhang and M. Dudley, Growth mechanism and dislocation characterization of silicon carbide epitaxial films, MRS Proceedings 911 (2006) 0911-B05-27.
12. R. Wang, R.-H Ma, G. Dhanaraj, Y. Chen, Yi and M. Dudley, Modeling of Halide Chemical Vapor Deposition of SiC, ASME International Mechanical Engineering Congress and Exposition, IMECE2006-14381, pp. 1-7.
13. Y. Chen, G. Dhanaraj, M. Dudley1, H. Zhang, R. Ma, Y. Shishkin, and S. E. Saddow, Multiplication of basal plane dislocations via interaction with c-axis threading dislocations in 4H-SiC, MRS Proceedings 911 (2006) 0911-B09-04.
14. X-Ray Topography and Defect Analysis, B. Raghothamachar, G Dhanaraj, M. Dudley and B. Jie, pp343-358 in “Imaging Crystalline Defects”- Ed. M. A. Crimp, Wiley 2006.
15. Silicon Carbide Crystals - Growth and Characterization, G. Dhanaraj, X.R. Huang, M. Dudley, V. Prasad and R.H. Ma, pp 181-232 in “Crystal Growth Technology”, Eds K. Byrappa and T. Ohachi, Springer co-published with William Andrew 2003.
16. Growth and Characterization of SiC single crystals, G. Dhanaraj, M. Dudley, R.H. Ma, H. Zhang and V. Prasad, p882-494 in "Crystal Growth ofTechnologically Important Materials" Eds K. Byrappa, T. Ohachi, H. Klapper and R. Fornari , Allied Publishers Pvt. Lts. New Delhi 2003.

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