Dr. Aidong Shen

The City College of the City University of New York, USA

Professor

Email: aidong@sci.ccny.cuny.edu

Qualifications

1992  Ph.D., Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Applied Physics

Publications (Selected)

1. “Room temperature and narrow intersubband electroluminescence from ZnCdSe/ZnCdMgSe quantum cascade laser structures”, Yu Yao, Adrian AlfaroMartinez, Kale J. Franz, William O. Charles, Aidong Shen, Maria C. Tamargo, and Claire F. Gmachl, Appl. Phys. Lett. 99, 041113 (2011).
2. J.D. Wu, C. T. Huang, Y.S. Huang, W.O. Charles, A. Shen, and M.C. Tamargo, “Photoreflectance and Fourier transform infrared spectroscopy study of intersubband transitions of a ZnxCd1-xSe/Znx′Cdy′Mg1-x′-y′Se asymmetric coupled quantum well structure for quantum cascade laser application”, Appl. Phys. Lett. 95, 191905 (2009).
3. Shen, W.O. Charles, B.S. Li, K.J. Franz, C. Gmachl, Q. Zhang, and M.C. Tamargo, “Wide band gap II-VI selenides for short wavelength intersubband devices”, J. Crystal Growth, 311, 2109 (2009).
4. B.S. Li, A. Shen, W.O. Charles, Q. Zhang, and M.C. Tamargo, “Mid-infrared intersubband absorption in wide band gap II-VI ZnxCd1-xSe multiple quantum wells with metastable zincblende MgSe barriers”, Appl. Phys. Lett. 92, 261104 (2008).
5. Kale J. Franz, William O. Charles, Aidong Shen, Anthony J. Hoffman, Maria C. Tamargo, and Claire Gmachl, "ZnCdSe/ZnCdMgSe quantum cascade electro-luminescence”, Appl. Phys. Lett. 92, 121105 (2008).
6. “Resonant cavity enhanced p-type GaAs/AlGaAs quantum well infrared photodetectors”, A. Shen, H. C. Liu, M. Gao, E. Dupont, M. Buchanan, J. Ehret, G. J. Brown, and F. Szmulowicz, Appl. Phys. Lett., 77, 2400(2000).
7. “Temperature dependence of photoresponse of p-type GaAs/AlGaAs multiple-quantum wells - theory and experiment”, F. Szmulowicz, A. Shen, H. C. Liu, G. J. Brown, Z. R. Wasilewski, and M. Buchanan, Phys. Rev. B 61, 13798(2000).
8. “Reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures under high As overpressure”, A. Shen, Y. Horikoshi, H. Ohno, and S. P. Guo, Appl. Phys. Lett., 71, 1540(1997).
9. “Epitaxy of (Ga,Mn)As, a new diluted magnetic semiconductor based on GaAs”, A. Shen, H. Ohno, F. Matsukura, Y. Sugawara, N. Akiba, T. Kuroiwa, A. Oiwa, A. Endo, S. Katsumoto and Y. Iye, Journal of Crystal Growth 175-176, 1069-1074 (1997).
10. “(Ga,Mn)As: a new diluted magnetic semiconductor based on GaAs”, H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto and Y. Iye, Appl. Phys. Lett. 69, 363(1996). 

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