Dr. Mukannan Arivanandhan

Shizuoka University, Japan

Assistant Professor

Email: arivu_cz@yahoo.co.in

Qualifications

2003-2006 Ph.D., Alagappa University, Physics

2001-2002 M.Phi, Alagappa University, Physics

1999-2001 M.Sc., Alagappa University,Physics

1996-1999 B.Sc., University of Madras, Physics

Publications (selected)

1. “Analysis of Dissolution and Growth Process of SiGe Alloy Semiconductor Based on Penetrated X- ray Intensities”M.Omprakash, M.Arivanandhan, R. Arun Kumar , H.Morii, T.Aoki, T.Koyama, Y.Momose, H.Ikeda, H. Tatsuoka, Y.Okano, T.Ozawa, S. Moorthy Babu, Y.Inatomi, and Y.Hayakawa, Journal of Alloys and Compounds 590 (2014) 96-101.
2. “The effect of heavily Ge codoping on grown-in microdefects and photovoltaic characteristics of B doped CZ-Si” M. Arivanandhan, R.Gotoh, K. Fujiwara, S. Uda, Y. Hayakawa, and M.Konagai, Scripta Materialia, 69 (2013) 686-689.
3. “Impact of Ge codoping on the enhancement of minority carrier lifetime in B-doped Czochralski –grown Si” Mukannan Arivanandhan, Raira Gotoh, Tatsuro Watahiki, Kozo Fujiwara, Yashiro Hayakawa, Satoshi Uda, Makoto Konagai, Journal of Applied Physics, 111, 043707 (2012) .
4. “Chemical synthesis of ZnO hexagonal thin nanodisks and dye-sensitized solar cell performance” M. Navaneethan, J. Archana, M. Arivanandhan, Y. Hayakawa, Physica Status Solidi RRL, 6, 120-122 (2012).
5. “Effect of solutal convection on the dissolution of GaSb into InSb melt and solute transport mechanism InGaSb solution: Numerical simulation and in-situ observation experiments” G. Rajesh, M. Arivanandhan, N. Suzuki, A. Tanaka, H. Morii, T. Aoki, T. Koyama, Y. Momose, T. Ozawa, Y. Inatomi, Y. Takagi, Y. Okano, Y. Hayakawa, Journal of Crystal Growth 324 (2011) 157-162.
6. “ Growth of highly homogeneous Si1-xGex bulk crystals for thermoelectric applications”, M. Arivanandhan, Y. Saito, T. Koyama, Y. Momose, H. Ikeda, A. Tanaka, T.Tatsuoka, D.K. Aswal, Y. Inatomi, Y. Hayakawa, J. Crystal Growth 318, (2010) 324-327.
7. “Effects of B and Ge codoping on minority carrier lifetime in Ga doped Czochralski-Silicon”, M. Arivanandhan, Raira Gotoh, Kozo Fujiwara, Satoshi Uda, Journal of Applied Physics, vol. 106, 013721 (2009).
8. “High minority carrier lifetime in Ga and Ge codoped Czochralski-Silicon”, M. Arivanandhan, Raira Gotoh, Kozo Fujiwara, Satoshi Uda, Applied Physics Letters, vol. 94, pp. 072102 (2009).
9. “Optical Frequency doubling in micro tube Czochralski (mT-CZ) grown benzophenone single crystals”, M.Arivanandhan, K.Sankaranarayanan, C.Sanjeeviraja, A.Arulchakkaravarthi, P.Ramasamy, Journal of Crystal Growth, Vol. 281, Pages 596-603 (2005).
10. “Highly textured ZnO thin films: a novel economical preparation and approachment for optical devices, UV lasers and green LEDs”, K.Ramamoorthy, M.Arivanandhan K.Sankaranarayanan and C.Sanjeeviraja, Material Chemistry and Physics, Vol. 85, Pages 257-262 (2004). (TOP 25 hottest articles of Material Chemistry and Physics, June 2004)

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