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W. Lei and C. Jagadish, ‘Lasers and photodetectors for Mid-infrared 2-3 μm applications’, Appl. Phys. Review in J.Appl. Phys., 104, 091101(2008).
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W. Lei, Y.H. Chen and Z.G. Wang, ‘Ordering of self-assembled quantum wires on InP (001) surfaces’, In One-Dimensional Nanostructures, Ed. Zhiming M. Wang, Springer London, Limited (2008).
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C.L. Yuan, B. Xu, and W. Lei, ‘Strain-induced direct band gap LaAlO3 nanocrystals’, Materials Letters, 68, 392 (2012).
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W. Lei, H.H. Tan, and C. Jagadish, ‘Controlling the morphology and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures via Sb exposure’, Appl. Phys. Lett., 99, 193110 (2011).
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T.F. Li, Y.H. Chen, W. Lei, X.L. Zhou, S. Luo, Y.Z. Hu, L.J. Wang, T. Yang and Z.G. Wang, ‘Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates’, Nanoscale Research Letters, 6, 463 (2011).
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W. Lei, ‘Fabrication and optical properties of self-assembled InAsSb/InP nanostructures on InP (001) substrate’,Journal of Nanoparticle Research, 13, 1647 (2011).
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T.F. Li, Y.H. Chen, W. Lei, X.L. Zhou，and Z.G. Wang,‘Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer’, Physica E, 43, 869 (2011).
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W. Lei, H. H. Tan, C. Jagadish, Q.J. Ren, J. Lu, and Z.H. Chen, ‘Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: effect of deposition thickness and composition’, Appl. Phys. Lett.,97, 223108 (2010).
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W. Lei, C. Notthoff, J. Peng, D. Reuter, A. Wieck, G. Bester, and A. Lorke, ‘``Artificial atoms'' in magnetic fields: Wave-function shaping and phase-sensitive tunneling’, Phys. Rev. Lett., 105, 176804 (2010). Highly featured in Nature Materials, 10, 173 (2011).
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W. Lei, H.H. Tan and C. Jagadish, 'Emission wavelength extension of mid-infrared InAsSb/InP nanostructures using InGaAsSb sandwich layers', Journal of Physics D: Applied Physics, 43 302001 (2010).
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W. Lei, H.H. Tan, and C. Jagadish，‘Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer’, Appl. Phys. Lett., 96, 213102 (2010).
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C. L. Yuan, J. G. Chu, and W. Lei, ‘Tuning defect-related photoluminescence of Ge nanocrystals by stress’, Applied Physics A: Materials Science & Processing, 99, 673 (2010).
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C.L Yuan, and W. Lei, ‘Photoluminescence and charge storage characteristics of silica nanocrystals: The role of stress-induced interface defects’, Applied Surface Science, 256, 3138 (2010).
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C.L Yuan, and W. Lei, ‘Photoluminescence of Al2O3 nanocrystals induced by compressive stress’, Physica E, 42,1687 (2010).
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W. Lei, C. Notthoff, A. Lorke, D. Reuter and A.D. Wieck, ‘Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy’, Appl. Phys. Lett., 96, 033111 (2010).
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W. Lei, H. H. Tan and C. Jagadish, ‘Effect of matrix material on the morphology and optical properties of InP-based InAsSb nanostructures’, Appl. Phys. Lett., 95, 143124 (2009).
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W. Lei, H. H. Tan, and C. Jagadish, ‘Formation and shape control of InAsSb/InP (001) nanostructures’, Appl. Phys.Lett.. 95, 013108 (2009).
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W. Lei, Y.L. Ren, Y.L. Wang, and Q. Li, ‘Alloy phase separation in InAs/InAlAs/InP nanostructure superlattices studied by finite element calculation’, J. Crystal Growth, 311, 4632 (2009).
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W. Lei, C. Notthoff, M. Offer, C. Meier, A. Lorke, C. Jagadish, and A. D. Wieck, ‘Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and 1-dimensional numerical simulation’, Journal of Material Research, 24, 2179 (2009).
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W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, and A. D. Wieck, ‘Probing the band structure of InAs/GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy’, Appl. Phys. Lett., 92,193111 (2008)