Prof. Terry L. Alford

School for Engineering of Matter
Arizona State University, USA

Email: TA@asu.edu

Qualifications

1991 Ph.D., Materials Science, Cornell University, USA

Publications (Selected)

1. ‘Effect of Electrical Stress on Indium Gallium Zinc Oxide (IGZO) Thin Film Transistors Parameters,’ Winnie P. Matthews, N. P. Vemuri, and T. L. Alford, submitted to IEEE Transactions on Electron Devices (2012).
2. ‘Investigation of Defect Generation and Annihilation in IGZO TFTs during Practical Stress Conditions: Illumination and Electrical Bias,’ Rajitha N. P. Vemuri, Winnie P. Matthews, and T. L. Alford, submitted to Journal of Applied Physics (2012).
3. ‘The Impact of Arsenic Implant Energy on Solid Phase Regrowth via Low Temperature Microwave Induction Heating,’ R.T. Crosby, Rajitha N. P. Vemuri, N. D. Theodore, T.L. Alford, submitted to Materials Science in Semiconductor Processing (2012).
4. ‘Characterization and Adhesion in Cu/Ru/SiO2/Si Multilayer Nanoscale Structure for Cu Metallization,’ N. Chawla, S.H. Venkatesh, D.R.P. Singh, and T.L. Alford submitted to Thin Solid Films (2012).
5. ‘Use for Ru Diffusion Barriers for Advanced Silver Metallization,’ A. Vanga and T.L. Alford, submitted to Thin Solid Films (2011).
6. ‘Texture Evolution in Silver Thin Films on Ru Underlayers,’ A. Vanga and T.L. Alford, submitted to Thin Solid Films (2011).
7. ‘Investigation Of Varying Thicknesses Of W-Ti Overlayers On Thermal Stability And Diffusion Of Silver Metallization,’ S. Bhagat, N.D. Theodore, A.T. Ngo, and T.L. Alford, submitted to Japanese Journal of Applied Physics (2011).
8. ‘Effect of Annealing in Different Environments on Electrical and Optical Properties of a-IZO Films on PEN, Mandar J. Gadre and T.L. Alford, submitted to Applied Physics Letters.
9. ‘Dopant Activation in Arsenic-doped Silicon by Susceptor-Assisted Microwave Annealing,’ Mandar J. Gadre, Rajitha Vemuri, N. David Theodoreb and T.L. Alford, submitted to Journal of Vacuum Science and Technology B, (2011).
10. ‘Room-Temperature Deposition and Annealing of High-Mobility and High-Transparency a-IGZO Thin Films Deposited on PEN,’ Mandar J. Gadre and T. L. Alford, submitted to Journal of Physics D: Applied Physics (2011).
11. ‘Susceptor Assisted Microwave Annealing for Recrystallization and Dopant Activation of Arsenic Implanted Silicon,’ R.N.P. Vermuri, N. D. Theodore, W. Chen, S.S. Lau, and T.L. Alford, submitted to Journal of Applied Physics (2011).
12. ‘ZnO-Based Transparent Anodes for Flexible Organic Light-Emitting Devices,’ K. Sivaramakrishnan, N. Bakken, and T.L. Alford, submitted to Applied Physics Letters (2011).
13. ‘Dopant Activation in Arsenic implanted Si by a Susceptor-Assisted Low Temperature Microwave Anneal,’ R.N.P. Vemuri, M.Gadre, N. D. Theodore, and T.L. Alford, accepted to IEEE Electron Device Letters (2011).
14. ‘Impact of Low-Temperature, Long-Duration Anneals on the Instability of a-IZO Thin-Film Transistors,’ A. Indluru, D.K. Schroder, and T.L. Alford, submitted to IEEE Transactions on Electron Devices (2011).
15. ‘Effects of Gamma Irradiation and Voltage Gate Stress on Performance and Lifetimes of a-Si:H Thin-Film Transistors for Flexible Electronics and Display,’ E.H. Lee, A. Indluru, D.R. Allee, L.T. Clark, K.E. Holbert, and T.L. Alford, accepted to Journal of Display Technology (2011).