Prof. Fayçal Djeffal

Batna University, Algeria

Professor

Email: faycal.djeffal@univ-batna.dz, faycaldzdz@hotmail.com, djeffaldzdz@yahoo.fr

Qualifications

2006 Ph.D., University of Batna, Algeria, Electronics

2001 M.Sc., University of Batna, Algeria, Electronics

1998 B.Sc., University of Batna, Algeria, Electronics

Publications (Selected)

1. N. Lakhdar, F. Djeffal, An analytical analysis of subthreshold behavior to study the scaling capability of deep submicron DG MESFETs, Journal of  Computational Electronics, Vol. 10, pp. 382-387. 2011.
2. T. Bentricia, F. Djeffal, Continuous analytic I-V model for GS DG MOSFETs including hot-carrier degradation effects, , Journal of Semiconductors, Vol. 33, pp. 014001.1-014001.6, 2012.
3. F. Djeffal, D. Arar, M.A. Abdi, R. Mahamdi and A. Errachid, A multigate design to improve the electrical performance for deep submicron ISFET-based sensors, Sensor Letters, Vol. 9, pp. 2309-2311, 2011.
4. F. Djeffal and T. Bendib, Multi-objective genetic algorithms based approach to optimize the electrical performances of the gate stack Double Gate (GSDG) MOSFET, J. Microelectronics,  Vol. 42, pp. 661-666, 2011.
5. N. Lakhdar, F. Djeffal, Z. Dibi, A new Dual-Material (DM) gate design to improve the subthreshold behavior of deep submicron GaN-MESFETs,  Physica status solidi C, Vol. 09, pp. 1109-1113, 2012.
6. N. Lakhdar and F. Djeffal, New optimized Dual-Material (DM) gate design to improve the submicron GaN-MESFETs reliability in subthreshold regime,  Microelectronics Reliability, vol.56, pp. 958–963, 2012.
7. M.A. Abdi, F. Djeffal, D. Arar, Compact Charge Model for Ultra-thin Nanoscale Double Gate MOSFETs, ScienceJet C, vol.1, pp.1-8, 2012.
8. T. Bentricia, F. Djeffal, Continuous analytic I-V model for GS DG MOSFETs including hot-carrier degradation effects, Journal of Semiconductors, Vol. 33, pp. 014001.1-014001.6, 2012.
9. M. Meguellati, F. Djeffal, New Dual-Dielectric Gate All Around (DDGAA) RADFET dosimeter  design to improve the radiation sensitivity, Nuclear Instruments and Methods in Physics Research Section A, Vol. 683, pp. 24–28, 2012.
10. Maoucha, F. Djeffal, Multi-objective-optimization-based approach to improve the electrical efficiency for organic solar cells, Journal of  Computational Electronics, 2012, DOI: 10.1007/s10825-012-0412-0.
11. F. Djeffal, Ferdi, and M. Chahdi, Multi-objective-optimization-based approach to improve the electrical efficiency for organic solar cells, Journal of Semiconductors, 2012, DOI: 10.1088/1674-4926/33/8/.
12. Ferdi, F. Djeffal, D. Arar, M. Chahdi, A. Benhaya,  Fuzzy-logic-based approach to study the electron mobility in nanoscale DG MOSFETs, EMCMRE-1, November 21-25, 2011, Marrakch, Morocco.
13. M.A. Abdi, F. Djeffal, T. Bendib, M. Chahdi, A. Benhaya, compact charge model for ultra-thin nanoscale DG MOSFETs, EMCMRE-1, November 21-25, 2011, Marrakch, Morocco.
14. N. Lakhdar, F. Djeffal and Z. Dibi, A new Dual-Material (DM) design to improve the subthreshold behavior of GaN-MESFETs, Symposium F. Group III nitrides and their heterostructures for electronics and photonics, E-MRS 2011, May 10-12, 2011,  Nice, France.
15. F. Djeffal, M. A. Abdi, Z. Dibi and D. Arar, An Analytical subthreshold-swing model including free carriers and interfacial traps effects for nanascale Double-Gate MOSFETs, Symposium I. Transport and photonics in Si-based nanomaterials and nanodevices, E-MRS 2011, May 10-12, 2011,  Nice, France.
16. N. Lakhdar, F. Djeffal and A. Benhaya, Optimisation du comportement sous-seuil d’un transistor double-grille GaN-MESFET fortement submicronique en utilisant les algorithmes génétiquess, International Conference on Systems and Information Processing ICSIP'11, May 15-17 2011, Guelma, Algeria
17. T. Bendib, F. Djeffal, T. Bentrcia, M.A. Abdi and D. Arar, Multi-objective genetic algorithms based approach to optimize the Small signal parameters of Gate Stack Double Gate MOSFET, International Conference on Systems and Information Processing ICSIP'11, May 15-17 2011, Guelma, AlgeriaF. Kadri, S. Drid and F. Djeffal, Direct torque control of induction motor fed by three-level NPC Inverter using Fuzzy Logic, International Conference on Systems and Information Processing ICSIP'11, May 15-17 2011, Guelma, Algeria.
18. N. Lakhdar, F. Djeffal, T. Bendib, A. Benhaya, Un modèle analytique permettant de décrire le comportement sous-seuil du transistor GCGS MOSFET nanométrique, The Inernational Conference on Electronics and  Oil, ICEO’11, March 01-02, 2011, Ouargla, Algeria.
19. N. Lakhdar, F. Djeffal, T. Bendib, A. Benhaya, Optimisation du comportement sous-seuil d’un transistor double-grille GaN-MESFET fortement submicronique en utilisant les Algorithmes génétiques, The Inernational Conference on Electronics and  Oil, ICEO’11, March 01-02, 2011, Ouargla, Algeria.
20. F. Djeffal, M.A. Abdi, D. Arar, T.Bendib, Surface- potential- based model to study the subthreshold swing behavior including hot-carrier effect for nanoscale GASGAA MOSFETs, IEEE International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 22-25 March 2010,  Hammamat, Tunisia.