has been cited by the following article(s):
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[1]
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Switching Speed Analysis of MOSFET-Based Absorber Integrated Antenna for 5G/WiMAX/WLAN.
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J. Commun.,
2023 |
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[2]
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Design and performance analysis of SiO2-MOSFET based absorber for reflected RF signal
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Materials Today: Proceedings,
2022 |
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[3]
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Design and analysis of MOSFET based absorber for 5G massive MIMO base station.
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2021 |
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[4]
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FABRICATION AND TESTING OF DOUBLE-POLE FOUR-THROW SWITCH WITH N-MOSFETS
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2019 |
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[5]
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Concept of Double-Pole Four-Throw Switch with n-MOSFETs
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2018 |
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[6]
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Design of Double-Pole Four-Throw RF Switch
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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch. Springer International Publishing,
2014 |
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[7]
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Low Noise Amplifier for 2.45 GHz Frequency Band at 0.18 μm CMOS Technology for IEEE Standard 802.11 b/g WLAN
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International Journal of Intelligent Systems and Applications (IJISA) ,
2012 |
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[8]
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Low Noise Amplifier for 2.45 GHz Frequency Band at 0.18 [micrometre] CMOS Technology for IEEE Standard 802.11 b/g WLAN
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International Journal of Intelligent Systems and Applications,
2012 |
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[9]
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DP4T RF CMOS Switch: A Better Option to Replace the SPDT Switch and DPDT Switch
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Recent Patents on Electrical & Electronic Engineering (Formerly Recent Patents on Electrical Engineering),
2012 |
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[10]
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Design and Noise Optimization of RF Low Noise Amplifier for IEEE Standard 802.11 a WLAN
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International Journal of VLSI design & Communication Systems (VLSICS),
2012 |
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[11]
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A 2.0 to 3.0 GHz CMOS low noise amplifier and its applications
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Engineering (NUiCONE), 2011 Nirma University International Conference on. IEEE,
2011 |
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[12]
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Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch
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Microelectronics Journal. Elsevier,
2011 |
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[1]
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Concept of Double-Pole Four-Throw Switch with n-MOSFETs
2018 International Conference on Advanced Computation and Telecommunication (ICACAT),
2018
DOI:10.1109/ICACAT.2018.8933765
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[2]
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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch
Analog Circuits and Signal Processing,
2014
DOI:10.1007/978-3-319-01165-3_2
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[3]
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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch
Analog Circuits and Signal Processing,
2014
DOI:10.1007/978-3-319-01165-3_2
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[4]
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Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch
Microelectronics Journal,
2011
DOI:10.1016/j.mejo.2011.07.003
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[5]
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Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch
Microelectronics Journal,
2011
DOI:10.1016/j.mejo.2011.07.003
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[6]
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A 2.0 to 3.0 GHz CMOS low noise amplifier and its applications
2011 Nirma University International Conference on Engineering,
2011
DOI:10.1109/NUiConE.2011.6153277
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