K. Navi, V. Foroutan, M. R. Azghadi, M. Maeen, M. Ebrahimpour, M. Kaveh and O. Kavehei, “A Novel Low-power Full Adder Cell with New Technique in Designing Logical Gates Based on Static CMOS Inverter,” Microelectronics Journal, Vol. 40, No.10, 2009.

has been cited by the following article:

• TITLE: Designing a Full Adder Circuit Based on Quasi-Floating Gate

  AUTHORS: Sahar Bonakdarpour, Farhad Razaghian

  KEYWORDS: Floating Gate Transistor; Full Adder Circuit; Leakage Current; Quasi Floating Gate Transistor; Refresh Circuit

  JOURNAL NAME: Energy and Power Engineering, Vol.5 No.3B, July 31, 2013

  ABSTRACT: Since in designing the full adder circuits, full adders have been generally taken into account, so as in this paper it has been attempted to represent a full adder cell with a significant efficiency of power, speed and leakage current levels. For this objective, a comparison between five full adder circuits has been provided. Applying floating gate technology and refresh circuits in the full adder cell lead to the reduction of leakage current on the gate node. The simulations were accomplished in this paper, through HSPICE software and 65 nm CMOS technology. The simulation results indicate the considerable efficiency of power consumption, speed and leakage current in the full adder cell rather than other cells.