F. Prins, A. Barreiro, J. W. Ruitenberg, J. S. Seldenthuis, N. Aliaga-Alcalde, L. M. K. Vandersypen and H. S. J. van der Zant, “Room-Temperature Gating of Molecular Junctions Using Few-Layer Graphene Nanogap Elec- trodes” Nano Lettres, Vol. 11, No. 11, 2011, pp. 4607- 4611. doi:10.1021/nl202065x

has been cited by the following article:

• TITLE: Characterization of Nanometer-Spaced Few-Layer Graphene Electrodes

  AUTHORS: Enrique Burzurí, Ferry Prins, Herre S. J. van der Zant

  KEYWORDS: Graphene; Spintronics; Three-Terminal Transistors

  JOURNAL NAME: Graphene, Vol.1 No.2, October 31, 2012

  ABSTRACT: We study graphene electrodes that can be used for contacting single molecules. The nanometer-scale gap is made by feedback controlled electroburning in few-layer graphene sheets. We analyze the time stability, and the influence of the temperature and gate voltage on the current flowing through the empty gaps. The electrodes are stable at room temper- ature for long periods of time. We show statistics of the relation between the initial resistance of the few-layer graphe- ne flakes and the final size of the gaps. We find that thicker flakes are more suitable for the fabrication of the elec-trodes.