TITLE:
Modelling of Thermal Behavior N-Doped Silicon Resistor
AUTHORS:
Fouad Kerrour, Ali Boukabache, Patrick Pons
KEYWORDS:
Silicon; TCRs, Mobility; Doping; Temperature
JOURNAL NAME:
Journal of Sensor Technology,
Vol.2 No.3,
September
26,
2012
ABSTRACT: From the analysis of the frequently models of mobility used in the literature, we determine by an identification method the temperature coefficients α and β of a silicon resistance doped with donor atoms. Their variations show a non linear dependence according to the doping and the existence of a minimal value at particular concentration. Moreover, the comparison between the obtained results and those of a P-type resistance shows that there is a strong similarity in their thermal behaviours, except for a particular couple of α and β.