J. Weng, Y. Zhang, G. Han, Y. Zhang, L. Xu, J. Xu, X. Huang and K. Chen, “Electrochemical Deposition and Characterization of Wide Band Semiconductor ZnO Thin Film,” Thin Solid Films, Vol. 478, No. 1-2, 2005, pp. 25- 29. doi:10.1016/j.tsf.2004.09.047

has been cited by the following article:

• TITLE: Deposition and Characterisation of Nitrogen-Doped Zinc Oxide Thin Films by MOCVD Using Zinc Acetate—Ammonium Acetate Precursor

  AUTHORS: U. S. Mbamara, O.O. Akinwumi, E.I. Obiajunwa, I.A.O. Ojo, E.O.B. Ajayi

  KEYWORDS: Zinc Oxide; Thin Films; N-Doping; Precursor; Characterisation

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.8, August 15, 2012

  ABSTRACT: The synthesis and comprehensive analysis of nitrogen-doped zinc oxide thin films grown from a compound precursor of zinc acetate and ammonium acetate has been reported. The precursor was processed in different ratios of the zinc acetate-ammonium acetate additives, and each combination was used to deposit a thin film using metalorganic chemical vapour deposition (MOCVD) method. The produced thin films were characterised using Rutherford backscattering (RBS) spectroscopy, uv-visible spectrometry, x-ray diffractometry, four point probe measurements and optical microscopy. The deposited thin films showed a fairly consistent zinc:oxygen:nitrogen ratio of 4.4:3.7:1, the film structures were quasicrystalline and the sheet resistivities were high, while other familiar characteristics like optical transmittance, bandgap, thermal stability, etc. were maintained in the grown films. Applications in device fabrication and active sensor devices were hence envisaged as the emergent potentials of the thin films.