Guo, P.L., Li, X.H., Chai, T., Feng, T.C. and Ge, Y.Q. (2019) Few-Layer Bismuthene for Robust Ultrafast Photonics in C-Band Optical Communications. Nanotechnology, 30, Article ID: 354002.
https://doi.org/10.1088/1361-6528/ab2150

has been cited by the following article:

• TITLE: Passively Q-Switched Erbium-Doped Fiber Laser Based on GeSe Saturable Absorber

  AUTHORS: Ying Liu, Zhifeng Hong, Xiaojuan Liu, Ran Zhang, Shiliang Yin

  KEYWORDS: GeSe Nanosheets, GeSe Saturable Absorber, Passively Q-Switched Erbium-Doped Fiber Laser

  JOURNAL NAME: Optics and Photonics Journal, Vol.11 No.4, April 26, 2021

  ABSTRACT: GeSe nanosheets were prepared by ultrasonic-assisted liquid phase exfoliation (LPE), and the nonlinear saturated absorption performance was experimentally studied. The modulation depth and saturation intensity of the prepared GeSe saturable absorber (SA) were 15% and 1.44 MW/cm2, respectively. Using the saturated absorption characteristics of GeSe SA, a passively Q-switched erbium-doped fiber laser was systematically demonstrated. As the pump power increases, the pulse repetition frequency increases from 22.8 kHz to 77.59 kHz. The shortest pulse duration is 1.51 μs, and the corresponding pulse energy is 46.14 nJ. Experimental results show that GeSe nanosheets can be used as high-efficiency SA in fiber lasers. Our results will provide a useful reference for demonstrating pulsed fiber lasers based on GeSe equipment.