Niu, G., Yin, S., Saint-Girons, G., Gautier, B., Lecoeur, P., Pillard, V., Hollinger, G. and Vilquin, B. (2011) Microelectronic Engineering, 88, 1232-1235.
https://doi.org/10.1016/j.mee.2011.03.028

has been cited by the following article:

• TITLE: Comparison of Epitaxial and Textured Ferroelectric BaTiO3 Thin Films

  AUTHORS: Baba Wague, Nicolas Baboux, Pedro Rojo Romeo, Yves Robach, Bertrand Vilquin

  KEYWORDS: Ferroelectric, Barium Titanate, Thin Film, Silicon, Sputtering, Epitaxy

  JOURNAL NAME: Journal of Modern Physics, Vol.11 No.4, April 8, 2020

  ABSTRACT: The properties of BaTiO3 (BTO) thin films deposited on different substrates by RF magnetron sputtering were investigated. Two representative substrates were selected and different heterostructures were studied. 1) SrTiO3 (STO) single crystals as a bulk oxide reference material, and 2) silicon as a semiconductor. SrRuO3 (SRO) and Pt bottom electrodes were deposited on the silicon substrate. The BTO structural characterizations show that all the films have (001) crystallographic orientation. We have compared the electrical properties of the different samples: the same dielectric constant and polarization values were obtained independently of the nature of the substrate.