TITLE:
Feasibility Study to Evaluate Lattice-Space Changing of a Step-Graded SiGe/Si (110) Using STEM Moiré
AUTHORS:
Junji Yamanaka, Mai Shirakura, Chiaya Yamamoto, Kei Sato, Takane Yamada, Kosuke O. Hara, Keisuke Arimoto, Kiyokazu Nakagawa, Akimitsu Ishizuka, Kazuo Ishizuka
KEYWORDS:
STEM Moiré, SiGe, Scanning Transmission Electron Microscopy
JOURNAL NAME:
Journal of Materials Science and Chemical Engineering,
Vol.6 No.7,
July
4,
2018
ABSTRACT:
A moiré between crystal lattice planes and scanning electron beam-lines formed in a scanning transmission electron microscope includes the information of the lattice spacing. We apply these phenomena to a compositionally graded SiGe thin film deposited onto a Si substrate by molecular beam epitaxy method. The results of the experiments and image analysis show the potential of this technique to analyze a slight change of the lattice spacing according to a compositional change.