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https://doi.org/10.1016/j.microrel.2014.07.098

has been cited by the following article:

• TITLE: Modelling and Calculation of Silicon Conduction Band Structure and Parameters with Arbitrary Uniaxial Stress

  AUTHORS: Guanyu Wang, Mingdao Yu, Chunyu Zhou

  KEYWORDS: Strained Silicon, Conduction Band, k·pTheory, Band Structure

  JOURNAL NAME: Journal of Applied Mathematics and Physics, Vol.6 No.1, January 23, 2018

  ABSTRACT: Using the k·p theory, the coupling effect between the Δ1 and Δ2’ bands on the energy band structure of different energy valleys is studied. The analytical model of the energy-dispersion relationship applicable to uniaxial stress for arbitrary crystal plane and orientation as well as different energy valleys is established. For typical crystal orientations, the main parameters of energy band structure such as band edge level, splitting energy, density-of-state (DOS) effective mass and conductivity effective mass are calculated. The calculated results are in good agreement with the data reported in related literature. Finally, the relationship between the DOS effective mass, conductivity effective mass and the change of stress and orientation of different crystal planes is given. The proposed model and calculation results can provide a theoretical reference for the design of nano-electronic devices and TCAD simulation.