G. E. Zardas, P. H. Yannakopoulos, Ch. I. Symeonides, and P. C. Euthymiou, “Persistent Photoconductivity in an InP: Fe Single Layer Structure a 10-pound note at Room Temperature,” Materials Science: Poland, Vol. 23, 2005, pp. 985-988.

has been cited by the following article:

• TITLE: On a Predictive Scheme of Slow Photoconductive Gain Evolution in Epitaxial Layer/Substrate Optoelectronic Nanodevices

  AUTHORS: G. E. Zardas, C. J. Aidinis, E. A. Anagnostakis, Ch. I. Symeonides

  KEYWORDS: Optoelectronic Nanodevices, Photoconductive Gain

  JOURNAL NAME: Open Journal of Microphysics, Vol.1 No.2, August 30, 2011

  ABSTRACT: The photoconductive response of the fundamental type of diodic nanodevice comprising a low resistivity, n-type epitaxial layer and a semi-insulating substrate is considered in terms of the optoelectronic parameter of photoconductive gain as experimentally measurable through monitoring the temporal evolution of conductivity current photoenhancement under continuous epilayer illumination-exposure. A modelling taking into account the built-in potential barrier of the interface of the epitaxial layer/substrate device (ESD) as well as its modification by the photovoltage induced within the illuminated ESD diode leads to predicting the technologically exploitable possibility of a notably slow photonic dose-evolution (exposure time-development) of the optonanoelectronics ESD photoconductive gain.