Ueno, T., Irisawa, T., Shiraki, Y., Uedono, A. and Tanigawa, S. (2000) Thin Solid Films, 369, 320. https://doi.org/10.1016/S0040-6090(00)00872-5

has been cited by the following article:

• TITLE: TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing

  AUTHORS: Junji Yamanaka, Shigenori Inoue, Keisuke Arimoto, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Atsushi Moriya, Yasuhiro Inokuchi, Yasuo Kunii

  KEYWORDS: Strained Heterodevice, Silicon-Carbon Alloy, Ion Implantation, Transmission Electron Microscopy

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.5 No.1, January 4, 2017

  ABSTRACT: Strained Si and its related materials, such as strained SiGe and strained silicon-carbon alloy (Si-C), are receiving tremendous interest due to their high carrier mobility. In this study we carry out a basic investigation of the change in microstructure of ion-implanted Si-C solid solution caused by rapid thermal annealing, because it is very important to realize a field-effect transistor made of this new material. The microstructures of arsenic-ion-, boron-ion-, and silicon-ion-implanted Si0.99C0.01 specimens upon thermal annealing are observed using transmission electron microscopy, and it is revealed that the rate of solid-state crystallization of ion-implanted Si-C is slower than that of the ion-implanted Si.