Article citationsMore>>
Xiu, F., Yanga, Z., Zhao, D., Liu, J., Alim, K.A., Balandin, A.A., Itkis, M.E. and Haddon, R.C. (2006) ZnO Growth on Si with Low-Temperature ZnO Buffer Layers by ECR-Assisted MBE. Journal of Crystal Growth, 286, 61-65.
http://dx.doi.org/10.1016/j.jcrysgro.2005.09.056
has been cited by the following article:
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TITLE:
Aluminum Doped ZnO Thin Films Using Chemical Spray Pyrolysis
AUTHORS:
Ramakrishnan Jayakrishnan
KEYWORDS:
Thin films, Chemical Spray Pyrolysis, ZnO, Photoluminescence, Excitons
JOURNAL NAME:
Open Access Library Journal,
Vol.2 No.12,
December
2,
2015
ABSTRACT:
Aluminum doped ZnO thin films were grown using chemical spray pyrolysis.
The doped films showed only blue and UV photoluminescence at room temperature.
The position of the near band edge emission was found to agree with the
theoretical value of ZnO nanocrystal band gap. The full width at half maximum
for the near band edge emission at room temperature was found to be ~ 100 meV,
which indicated films to be of very good device quality. The presence of a weak
photoluminescence at 3.08 ± 0.02 eV in the films was assigned to defect related
emission. We had shown in this report that it was possible to increase the
efficiency of the photoluminescence by increasing the substrate temperature
used for film growth. The optimized films showed resistivity of 1.5 × 10﹣2 Ω·cm.
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