Article citationsMore>>
Mateos, D., Curiel, M.A., Nedev, N., Nesheva, D., Machorro, R., Manolov, E., Abundiz, N., Arias, A., Contreras, O., Valdez, B., Raymond, O. and Siqueiros, J.M. (2013) TEM and Spectroscopic Ellipsometry Studies of Multilayer Gate Dielectrics Containing Crystalline and Amorphous Si Nanoclusters. Physica E, 51, 111-114.
http://dx.doi.org/10.1016/j.physe.2012.11.015
has been cited by the following article:
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TITLE:
Ellipsometric Study of SiOx Thin Films by Thermal Evaporation
AUTHORS:
David Salazar, Roberto Soto-Molina, Eder German Lizarraga-Medina, Marco Antonio Felix, Nicola Radnev, Heriberto Márquez
KEYWORDS:
Ellipsometry, Refraction Index, SiOx Thin Films
JOURNAL NAME:
Open Journal of Inorganic Chemistry,
Vol.6 No.3,
July
5,
2016
ABSTRACT: This paper presents a study of amorphous SiOx thin films by means of Variable Angle Spectroscopic Ellipsometry (VASE) technique. Tauc Lorentz, Lorentz and Cauchy models have been used to obtain physical thickness and complex refractive index (n and k) from experimental data. In order to obtain a wide range to x stoichiometry values, the films were prepared by vacuum thermal evaporation of SiO on glass substrates, under different and controlled deposition conditions.
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