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Yao, J., Lin, J., Dai, Y., Ruan, G., Yan, Z., Li, L., Zhong, L., Natelson, D. and Tour, J.M. (2012) Highly Transparent Nonvolatile Resistive Memory Devices from Silicon Oxide and Graphene. Nature Communications, 3, Article ID: 1101.
http://dx.doi.org/10.1038/ncomms2110

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