Article citationsMore>>
Nanjo, T., Takeuchi, M., Suita, M., Abe, Y., Oishi, T., Abe, Y., Tokuda, Y. and Aoyagi, Y. (2008) Remarkable Breakdown Voltage Enhancement in AlGaN Channel high Electron Mobility Transistors. Applied Physics Letters, 92, Article ID: 263502.
http://dx.doi.org/10.1063/1.2949087
has been cited by the following article:
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TITLE:
Polarization and Breakdown Analysis of AlGaN Channel HEMTs with AlN Buffer
AUTHORS:
Godwin Raj, Mohan Kumar, Chandan Kumar Sarkar
KEYWORDS:
AlGaN Channel, Sheet Carrier Concentration Model, N- and Ga-face, Polarization, High Breakdown, Total Induced Net Interface Polarization
JOURNAL NAME:
World Journal of Condensed Matter Physics,
Vol.5 No.3,
August
21,
2015
ABSTRACT: We have demonstrated the first carrier density model for AlGaN channel with AlN buffer using spontaneous and piezoelectric polarization comparison with experimental and theoretical results. From the results we proved that the formation of 2DEG in undoped structure relied both on spontaneous and piezoelectric polarization. The electron distribution of Al concentration (0
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