Horio, Y., Yamashita, H. and Hayashi, T. (2004) Microstructure and Thermoelectric Properties of Hot-Pressed p-Type Bi0.5Sb1.5Te3 Alloys Prepared by Rapid Solidification Technique. Materials Transactions, 45, 3309-3313.
http://dx.doi.org/10.2320/matertrans.45.3309

has been cited by the following article:

• TITLE: The Role of Silver Additions in Formation of Sn-Bi-Ag Semiconductor Alloys by Rapid Solidification

  AUTHORS: Tarek El Ashram

  KEYWORDS: Rapid Solidification, Semiconductor, Energy gap, Resistivity, Sn-Bi-Ag Alloys

  JOURNAL NAME: Materials Sciences and Applications, Vol.6 No.3, March 10, 2015

  ABSTRACT: Five alloys Sn-5Bi-xAg (x = 0, 1, 2, 3, and 4 in at %) are produced by rapid solidification using melt-spinning technique. From temperature dependence of electrical resistivity (TDR), it is found that the Sn-5Bi-xAg (x = 1, 2, 3, 4 in at %) rapidly solidified by melt spinning technique are narrow band semiconductor alloys. The energy gap Eg decreases by increasing Ag concentration from 203 meV for Sn-5Bi-1Ag to 97.5 meV for Sn-5Bi-4Ag alloy. From x-ray diffraction analysis (XRD), it is found that the Hume-Rothery condition for phase stability is not satisfied for this alloy.