Yamada, M., Mitani, T., Narukawa, Y., Shioji, S., Niki, I., Sonobe, S., et al. (2002) InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode. Japanese Journal of Applied Physics, 41, L1431-L1433. http://dx.doi.org/10.1143/JJAP.41.L1431

has been cited by the following article:

• TITLE: Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate

  AUTHORS: Sonachand Adhikari, Saroj Kanta Patra, Ashok Lunia, Sandeep Kumar, Priyavart Parjapat, Bhoopendra Kushwaha, Pawan Kumar, Sumitra Singh, Ashok Chauhan, Kuldip Singh, Suchandan Pal, C. Dhanavantri

  KEYWORDS: LED, GaN/InGaN, PSS

  JOURNAL NAME: Journal of Applied Mathematics and Physics, Vol.2 No.12, November 25, 2014

  ABSTRACT: GaN/InGaN based violet light emitting diodes (LEDs), emitting at 430 nm, have been grown on conventional single side polished (SSP) and patterned sapphire substrates (PSS). Characteristics of the epitaxial wafers and subsequently fabricated LEDs have been analyzed. The photoluminescence (PL) peaks have been observed at 428.1 nm 426.1 nm for the epitaxial layers on SSP and PSS respectively. The PL intensity is 2.9 times higher in the case of PSS. The electroluminescence (EL) peaks have been observed at 430.78 nm and 430.35 nm for the LEDs on SSP and PSS respectively. The light output from LED fabricated on the PSS is 2.15 times higher than that of the LED on SSP at a forward current of 100 mA.