D. Lausch, K. Petter, H. V. Wenckstern and M. Grundmann, “Correlation of Pre-Breakdown Sites and Bulk Defects in Multicrystalline Silicon Solar Cells,” Physica Status Solidi (RRL), Vol. 3, No. 2-3, 2009, pp. 70-72. http://dx.doi.org/10.1002/pssr.200802264

has been cited by the following article:

• TITLE: Microscopic Study of Defect Luminescence between 0.72 - 0.85 eV by Optical Microscopy

  AUTHORS: Dominik Lausch, Christian Hagendorf

  KEYWORDS: Defect Luminescence; Recombination Active Defects; Silicon Solar Cells; Optical Microscopy

  JOURNAL NAME: Microscopy Research, Vol.2 No.1, January 22, 2014

  ABSTRACT: In this contribution, an experimental setup to investigate the defect luminescence between 0.72 - 0.85 eV of single defects in Silicon by optical microscopy is introduced. For this purpose, an optical microscope is equipped with an InGaAs CCD detector and a longpass filter with a cut-off wavelength at 1450 nm in order to filter out the band-to-band luminescence at around 1.1 eV. Grain boundaries showing homogeneous distributed defect luminescence can be localized at a μm-scale.