D. Lausch, K. Petter, B. Henke, R. Bakowskie, S. Schweizer and C. Hagendorf, “Classification of Recombination Active Defect Structures in Multicrystalline Silicon Solar Cells,” Energy Procedia, Vol. 8, 2011, pp. 28- 34. http://dx.doi.org/10.1016/j.egypro.2011.06.097

has been cited by the following article:

• TITLE: Microscopic Study of Defect Luminescence between 0.72 - 0.85 eV by Optical Microscopy

  AUTHORS: Dominik Lausch, Christian Hagendorf

  KEYWORDS: Defect Luminescence; Recombination Active Defects; Silicon Solar Cells; Optical Microscopy

  JOURNAL NAME: Microscopy Research, Vol.2 No.1, January 22, 2014

  ABSTRACT: In this contribution, an experimental setup to investigate the defect luminescence between 0.72 - 0.85 eV of single defects in Silicon by optical microscopy is introduced. For this purpose, an optical microscope is equipped with an InGaAs CCD detector and a longpass filter with a cut-off wavelength at 1450 nm in order to filter out the band-to-band luminescence at around 1.1 eV. Grain boundaries showing homogeneous distributed defect luminescence can be localized at a μm-scale.