J. J. Lu, S. Y. Tsai, Y. M. Luc, T. C. Lin and K. J. Gan, “Al-Doping Effect on Structural, Transport and Optical Properties of ZnO Films by Simultaneous RF and DC Magnetron Sputtering,” Solid State Communications, Vol. 149, 2009, pp. 2177-2180.
http://dx.doi.org/10.1016/j.ssc.2009.09.021

has been cited by the following article:

• TITLE: Al-Doping Effect on the Surface Morphology of ZnO Films Grown by Reactive RF Magnetron Sputtering

  AUTHORS: Erica Pereira da Silva, Michel Chaves, Gilvan Junior da Silva, Larissa Baldo de Arruda, Paulo Noronha Lisboa-Filho, Steven Frederick Durrant, José Roberto Ribeiro Bortoleto

  KEYWORDS: ZnO Thin Films; Surface Morphology; RF Magnetron Sputtering

  JOURNAL NAME: Materials Sciences and Applications, Vol.4 No.12, December 6, 2013

  ABSTRACT: Zinc oxide (ZnO) and aluminum-doped zinc oxide (ZnO:Al) thin films were deposited onto glass and silicon substrates by RF magnetron sputtering using a zinc-aluminum target. Both films were deposited at a growth rate of 12.5 nm/min to a thickness of around 750 nm. In the visible region, the films exhibit optical transmittances which are greater than 80%. The optical energy gap of ZnO films increased from 3.28 eV to 3.36 eV upon doping with Al. This increase is related to the increase in carrier density from 5.9 × 1018 cm-3 to 2.6 × 1019 cm-3. The RMS surface roughness of ZnO films grown on glass increased from 14 to 28 nm even with only 0.9% at Al content. XRD analysis revealed that the ZnO films are polycrystalline with preferential growth parallel to the (002) plane, which corresponds to the wurtzite structure of ZnO.