The Parchinsky Item B., S. I. Vlasov and L. G. Ligaj, “Probe of Influence of Ultrasonic Effect on Generating Characteristics of Previously Irradiated Border of Silicon —Dioxide Silicon,” Semiconductors, Vol. 40, No. 7, 2006, pp. 829-832.

has been cited by the following article:

• TITLE: The Influence of Ultrasonic Treatment on the Properties of Schottky Diodes

  AUTHORS: I. G. Pashayev

  KEYWORDS: Photosensitivity; Barrier Properties; Amorphous Metals; Diodes Shottki; Superfluous Currents; Degradations; Ultrasonic Influence; Silicon Solar Elements

  JOURNAL NAME: Open Journal of Acoustics, Vol.3 No.3A, September 11, 2013

  ABSTRACT: The given work studies the reason of the change of a superfluous current near crystallization temperature of an amorphous αPbSb metal alloy and at the same time founds out the influence of ultrasonic processing (USP) on the properties of αPbSb-nSi solar elements (SE), made by Shottki diodes technology (ShD) with a metal alloy. It is found that occurrence of a superfluous current αPbSb-nSi ShD under the influence of thermoannealing is connected with changes of structure of an amorphous film of metal at transition in a polycrystalline condition. VAC damaged αPbSb-nSi Sh Dare very sensitive to annealing time. Eventually, even at room temperature, level of a superfluous current decreases, i.e. “the wound” put by mechanical damage sort of heals, restoration process occurs the faster, the higher the annealing temperature is. Function of γt annealing parameters changes in an interval and the influence USP on photo-electric properties αPbSb-nSi SE depends on the chosen UIT mode.